Journal: Micromachines

Article Title: Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

doi: 10.3390/mi12010065

Figure Lengend Snippet: Commercial SiC MOSFET drivers by Rohm Semiconductor, Littelfuse, Diodes Incorporated, NXP Semiconductors, and Power Integrations.

Article Snippet: Since SiC MOSFETs have been developed for a longer time, there is a much larger variety of companies that produce SiC MOSFETs: ON Semiconductor (900 and 1200 V) [ ], Littelfuse (600~1700 V) [ ], Infineon Technologies (650~1700 V) [ ], Cree (650~1700 V) [ ], Rohm Semiconductor (650~1700 V) [ ], STMicroelectronics (650~1700 V) [ ], United Silicon Carbide (650~1700 V) [ ], Microchip (700~1700 V) [ ], and GeneSiC Semiconductor (1200~3300 V) [ ]., , , , , , , and present the device specifications of commercial SiC MOSFETs with voltages ratings between 600 and 1200 V. When comparing the listed commercial devices, we can see that it is common for SiC MOSFETs to possess much higher current capabilities than those of GaN HEMTs, which makes SiC devices more suitable for high-power applications such as high-speed railway, power transmission, industrial drives, smart grid, and wind power generation.

Techniques:

Journal: Sensors (Basel, Switzerland)

Article Title: Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

doi: 10.3390/s21165627

Figure Lengend Snippet: The FIT values of the GEN3 SiC MOSFET tested by Airbus.

Article Snippet: Three measurements steps were performed after 168, 500 and 1000 h. These tests were performed on 59 samples of GEN3 SiC MOSFETs split in pristine no irradiated (No Irr) 30 samples, 16 samples irradiated by STMicroelectronics (ST) and 13 samples by Airbus (AB).

Techniques: Irradiation

Journal: Sensors (Basel, Switzerland)

Article Title: Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

doi: 10.3390/s21165627

Figure Lengend Snippet: Symbols and test conditions of some electrical parameters of the power MOSFETs.

Article Snippet: Three measurements steps were performed after 168, 500 and 1000 h. These tests were performed on 59 samples of GEN3 SiC MOSFETs split in pristine no irradiated (No Irr) 30 samples, 16 samples irradiated by STMicroelectronics (ST) and 13 samples by Airbus (AB).

Techniques:

Journal: Sensors (Basel, Switzerland)

Article Title: Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

doi: 10.3390/s21165627

Figure Lengend Snippet: Sub−threshold ( a ) and Fowler-Nordheim ( b ) curves of three samples of the GEN3 SiC MOSFET before and after neutron irradiation. Two sub−threshold curves of a golden smaple are also shown.

Article Snippet: Three measurements steps were performed after 168, 500 and 1000 h. These tests were performed on 59 samples of GEN3 SiC MOSFETs split in pristine no irradiated (No Irr) 30 samples, 16 samples irradiated by STMicroelectronics (ST) and 13 samples by Airbus (AB).

Techniques: Irradiation

Journal: Sensors (Basel, Switzerland)

Article Title: Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

doi: 10.3390/s21165627

Figure Lengend Snippet: Weibull−plots of failed SiC and Si power MOSFETs as a function of neutron fluence.

Article Snippet: Three measurements steps were performed after 168, 500 and 1000 h. These tests were performed on 59 samples of GEN3 SiC MOSFETs split in pristine no irradiated (No Irr) 30 samples, 16 samples irradiated by STMicroelectronics (ST) and 13 samples by Airbus (AB).

Techniques:

Journal: Sensors (Basel, Switzerland)

Article Title: Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

doi: 10.3390/s21165627

Figure Lengend Snippet: HTRB and HTGB tests results of the GEN3 SiC MOSFETs.

Article Snippet: Three measurements steps were performed after 168, 500 and 1000 h. These tests were performed on 59 samples of GEN3 SiC MOSFETs split in pristine no irradiated (No Irr) 30 samples, 16 samples irradiated by STMicroelectronics (ST) and 13 samples by Airbus (AB).

Techniques:

Journal: Sensors (Basel, Switzerland)

Article Title: Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

doi: 10.3390/s21165627

Figure Lengend Snippet: Drifts of some GEN3 SiC MOSFET electrical parameters for the HTRB test.

Article Snippet: Three measurements steps were performed after 168, 500 and 1000 h. These tests were performed on 59 samples of GEN3 SiC MOSFETs split in pristine no irradiated (No Irr) 30 samples, 16 samples irradiated by STMicroelectronics (ST) and 13 samples by Airbus (AB).

Techniques:

Journal: Sensors (Basel, Switzerland)

Article Title: Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

doi: 10.3390/s21165627

Figure Lengend Snippet: Drifts of some GEN3 SiC MOSFET electrical parameters for the HTGB1 test.

Article Snippet: Three measurements steps were performed after 168, 500 and 1000 h. These tests were performed on 59 samples of GEN3 SiC MOSFETs split in pristine no irradiated (No Irr) 30 samples, 16 samples irradiated by STMicroelectronics (ST) and 13 samples by Airbus (AB).

Techniques:

Journal: Sensors (Basel, Switzerland)

Article Title: Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

doi: 10.3390/s21165627

Figure Lengend Snippet: Drifts of some GEN3 SiC MOSFET electrical parameters for the HTGB2 test.

Article Snippet: Three measurements steps were performed after 168, 500 and 1000 h. These tests were performed on 59 samples of GEN3 SiC MOSFETs split in pristine no irradiated (No Irr) 30 samples, 16 samples irradiated by STMicroelectronics (ST) and 13 samples by Airbus (AB).

Techniques:

Journal: Sensors (Basel, Switzerland)

Article Title: Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

doi: 10.3390/s21165627

Figure Lengend Snippet: Shift of the median of some electrical parameters during HTRB stress of GEN3 SiC MOSFETs. The error bars indicate the minimum and maximum value.

Article Snippet: Three measurements steps were performed after 168, 500 and 1000 h. These tests were performed on 59 samples of GEN3 SiC MOSFETs split in pristine no irradiated (No Irr) 30 samples, 16 samples irradiated by STMicroelectronics (ST) and 13 samples by Airbus (AB).

Techniques:

Journal: Sensors (Basel, Switzerland)

Article Title: Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

doi: 10.3390/s21165627

Figure Lengend Snippet: Shift of the median of some electrical parameters during HTGB2 stress of GEN3 SiC MOSFETs. The error bars indicate the minimum and maximum value.

Article Snippet: Three measurements steps were performed after 168, 500 and 1000 h. These tests were performed on 59 samples of GEN3 SiC MOSFETs split in pristine no irradiated (No Irr) 30 samples, 16 samples irradiated by STMicroelectronics (ST) and 13 samples by Airbus (AB).

Techniques: